DMN3732UFB4Q-7B

$0.23

Description：MOSFET BVDSS: 25V~30V X2-DFN1006
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:6f2506104508 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V X2-DFN1006
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：460mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id：950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.9 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：40.8 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：490mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN1006-3
Package / Case：3-XFDFN

Download product information

DMN3732UFB4Q-7B

Overview

The DMN3732UFB4Q-7B is a 30V N-channel enhancement mode MOSFET from Diodes Incorporated, designed for high-efficiency power management. It features an X2-DFN1006-3 package with a 0.4mm ultra-low profile and 0.6mm² footprint. The device offers low on-state resistance (RDS(ON)) of 460mΩ at VGS=4.5V and 560mΩ at VGS=2.5V, supporting continuous drain currents up to 1.3A at +25°C. It includes ESD protection and is AEC-Q101 qualified for automotive applications.

Feature Summary

Ultra-low profile 0.4mm package with a compact 0.6mm² footprint
Low gate threshold voltage enabling direct battery drive capability
ESD protected gate structure for enhanced reliability
Qualified for automotive applications under AEC-Q101 standards

Applications

Load switches
Portable applications
Power-management functions

Procurement Notes

Verify the specific ordering suffix '-7B' corresponds to the 10,000-unit reel configuration as documented in the manufacturer's ordering information. Confirm that the 'Q' designation indicates AEC-Q101 qualification and IATF 16949 manufacturing compliance if automotive grade requirements are necessary for the design. Ensure the X2-DFN1006-3 package dimensions align with the PCB pad layout specifications provided in the datasheet.

Selection Notes

Select this component when space constraints require a footprint significantly smaller than standard SOT-23 packages while maintaining robust switching performance. The low VGS(TH) makes it suitable for applications requiring direct drive from single-cell batteries or low-voltage logic sources. Consider the thermal resistance characteristics and power dissipation limits relative to the intended operating temperature range and board copper area.

Part Context

This part belongs to the DMN37 series of N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a molded plastic X2-DFN1006-3 package. The device is lead-free, fully RoHS compliant, and halogen/antimony free, adhering to environmental directives.

Replacement Considerations

DMN3730UFB4-7

FAQ

Is the DMN3732UFB4Q-7B suitable for automotive applications?

Yes, the DMN3732UFB4Q is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.