DMN3732UQ-7

$0.04

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:d0c11f4d17e8 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：460mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id：950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.9 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：40.8 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：420mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN3732UQ-7

Overview

The DMN3732UQ-7 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) rating of ±8V. The device offers low on-state resistance, with RDS(ON) values of 460mΩ at VGS=4.5V, 560mΩ at VGS=2.5V, and 730mΩ at VGS=1.8V. Continuous drain current (ID) reaches 1A at TA=+25°C. Packaged in an SOT23 housing, it supports an operating temperature range from -55°C to +150°C.

Feature Summary

Designed for high efficiency power management applications with minimized on-state resistance.
Features fast switching speed and low gate threshold voltage for efficient control.
Includes ESD protected gate structure for enhanced reliability.
Qualified for automotive applications under AEC-Q101 standards and PPAP capable.

Applications

Load switches in portable electronics
High efficiency power management circuits

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the component meets RoHS 3 compliance requirements if applicable to your manufacturing process. Ensure the selected variant matches the required automotive qualification status if intended for IATF16949 certified facility production lines.

Selection Notes

Select this component when a 30V N-channel MOSFET with low RDS(ON) is required for portable electronics load switching. Consider the thermal resistance characteristics and package limitations for power dissipation needs. Verify compatibility with gate drive voltages, particularly at lower thresholds like 1.8V or 2.5V, to ensure optimal conduction performance within the circuit design constraints.

Part Context

This part belongs to the DMN3732UQ series of advanced information MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a standard SOT23 surface-mount package. The product line emphasizes green manufacturing practices, being halogen and antimony-free while maintaining full lead-free compliance for environmental safety standards.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified equivalent part numbers. Cross-referencing should strictly adhere to electrical parameters and package dimensions specified in the datasheet to ensure functional compatibility without modification.

FAQ

Is the DMN3732UQ-7 suitable for automotive applications?

Yes, the DMN3732UQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities, making it suitable for automotive applications requiring specific change control.