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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 1.1A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：1.1A (Ta)
- Rds On (Max) @ Id, Vgs：460mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：40.8pF @ 25V
- Power - Max：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMN3732UVTQ-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a TSOT26 package. It features a drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 1.1A at +25°C. The device offers low on-state resistance, rated at 460mΩ maximum at VGS = 4.5V and 560mΩ at VGS = 2.5V. Key electrical parameters include a gate threshold voltage (VGS(TH)) ranging from 0.45V to 0.95V, total gate charge (Qg) of 0.9nC, and input capacitance (Ciss) of 40.8pF. Power dissipation is specified as 0.5W or 0.8W depending on PCB mounting conditions, with an operating temperature range of -55°C to +150°C.
Feature Summary
- Dual N-channel configuration designed for high-efficiency power management applications
- Optimized for minimized on-state resistance while maintaining superior switching performance
- Qualified for automotive applications under AEC-Q101 standards with PPAP capability
- Manufactured using lead-free, halogen-free, and antimony-free green materials
Applications
- Backlighting circuits
- DC-DC converters
- Power-management functions
Procurement Notes
Verify the specific ordering suffix when purchasing. The datasheet lists DMN3732UVTQ-7 for 3,000 units per tape and reel, and DMN3732UVTQ-13 for 10,000 units per tape and reel. Confirm that the requested quantity matches the standard packing carrier requirements of the manufacturer to ensure correct fulfillment.
Selection Notes
Select this component for designs requiring a compact dual N-channel solution with low RDS(ON). Ensure the gate drive voltage meets the minimum requirements for the desired conduction level, as RDS(ON) varies significantly between 1.8V, 2.5V, and 4.5V gate biases. Verify thermal management capabilities against the specified junction-to-ambient thermal resistance values for the target PCB layout.
Part Context
This part belongs to the DMN3732UVTQ series of dual N-channel MOSFETs from Diodes Incorporated. It utilizes the TSOT26 surface-mount package, which provides a small footprint suitable for space-constrained portable electronics and dense circuit board layouts.
Replacement Considerations
Direct substitutes are not explicitly listed in the official documentation. When evaluating alternatives, compare key parameters such as BVDSS, ID, RDS(ON) at equivalent VGS levels, and package dimensions to ensure mechanical and electrical compatibility within the existing design constraints.
