DMN3900UFA-7B

$0.25

Description：MOSFET N-CH 30V 550MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:370ffea0637c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 550MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：550mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：760mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id：950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.7 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：42.2 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：390mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN0806-3
Package / Case：3-XFDFN

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DMN3900UFA-7B

Overview

The DMN3900UFA-7B is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 30V and a continuous drain current (I_D) of 0.65A at 25°C. The device offers a maximum on-resistance (R_DS(on)) of 760mΩ at V_GS = 4.5V and 1500mΩ at V_GS = 1.8V. It operates within a junction temperature range of -55°C to +150°C, with a power dissipation of 490mW. The component utilizes an X2-DFN0806-3 surface-mount package.

Feature Summary

Ultra-low profile 0.4mm package design with a footprint 16 times smaller than SOT23
Low gate threshold voltage enabling direct battery drive capability
Qualified to AEC-Q101 standards for high reliability applications
Totally lead-free, fully RoHS compliant, and halogen/antimony free

Applications

Load switch circuits
Portable electronic devices
Power management functions

Procurement Notes

Verify the specific ordering suffix '-7B' corresponds to the 10,000-unit reel quantity configuration as defined in the manufacturer's documentation. Confirm that the required packaging format aligns with standard tape-and-reel handling procedures. Ensure procurement channels are authorized to guarantee product authenticity and traceability. Cross-reference the part marking 'NU' with the datasheet to validate the received components against official specifications.

Selection Notes

Select this component for designs requiring compact footprints and low on-state resistance in portable systems. The low gate threshold voltage facilitates direct interfacing with battery-powered logic without additional level shifting. Evaluate thermal constraints carefully, as the small package size limits total power dissipation to 490mW. Ensure the application voltage does not exceed the 30V drain-source rating under all operating conditions.

Part Context

This part belongs to the DMN3900 series of N-channel MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The device is intended for high-efficiency power management applications where space constraints are critical. It represents a solution for modern electronics requiring reduced board area and improved energy efficiency.

Replacement Considerations

Consult the manufacturer's official substitution guide or equivalent product lists for verified alternatives. Do not assume pin-compatible replacements without verifying electrical parameters such as R_DS(on), V_DSS, and package dimensions against the original datasheet requirements.