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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V POWERDI333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：87A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2387 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMN39M1LFVW-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30 V and a gate-source voltage (VGSS) rating of ±20 V. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 5.0 mΩ at VGS = 10 V with an ID of 30 A, and 7.4 mΩ at VGS = 4.5 V with an ID of 15 A. Continuous drain current reaches 87 A at TC = +25°C. Total gate charge is 19 nC at VGS = 4.5 V and 40 nC at VGS = 10 V. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Minimizes on-state resistance while maintaining superior switching performance for high-efficiency power management.
- Small form factor thermally efficient package enables higher density end products.
- Occupies just 33% of the board area occupied by SO-8 enabling smaller end product.
Applications
- Backlighting
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packing quantity and carrier type. Confirm compliance requirements such as RoHS and halogen-free status directly from the manufacturer's datasheet or quality definitions page before procurement. Ensure thermal design accounts for junction-to-ambient resistance values under intended mounting conditions.
Selection Notes
Select this component when low RDS(ON) and small footprint are critical for high-density designs. Evaluate thermal resistance parameters based on the specific PCB copper layout and heat sinking strategy. Verify that the required continuous and pulsed drain currents align with the application's operational demands and ambient temperature constraints.
Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the PowerDI3333-8 package, which provides a compact solution compared to traditional packages like SO-8. The series is designed for applications requiring high efficiency and low conduction losses in power management circuits.
Replacement Considerations
Consult official Diodes Incorporated documentation for qualified substitutes. Verify pinout compatibility, electrical ratings, and package dimensions before substitution. No public substitute part numbers are confirmed in the provided source material.
