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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V SO-8 T&R 2
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：42 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2311 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.4W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMN39M1LSS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a low on-state resistance (RDS(ON)) of 5.5mΩ at VGS=10V with a continuous drain current (ID) of 15A. At VGS=4.5V, RDS(ON) is 7.5mΩ with an ID of 13A. The device operates within a temperature range of -55°C to +150°C, dissipates up to 1.4W to 1.9W depending on mounting, and utilizes an SO-8 surface-mount package.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
- Undergoes 100% Unclamped Inductive Switching (UIS) testing in production to ensure robust end-application reliability.
- Totally lead-free, fully RoHS compliant, and halogen and antimony free.
Applications
- Motor controls
- Backlighting
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as documented in the official datasheet. Confirm that the SO-8 package material meets the required UL flammability classification rating of 94V-0 for your specific assembly process. Ensure compatibility with J-STD-020 Level 3 moisture sensitivity requirements during storage and handling.
Selection Notes
Select this component when a 30V N-channel MOSFET with low on-resistance and high continuous drain current capability is required. The SO-8 package provides a balance between thermal dissipation and board space efficiency. Consider the gate threshold voltage characteristics if driving directly from lower voltage logic levels, noting the specified performance at both 4.5V and 10V gate drive conditions.
Part Context
This part belongs to the DMN39M1LSS series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on minimizing on-state resistance to support high-efficiency applications. The product line includes various voltage ratings and packages, with this specific model utilizing the SO-8 form factor for surface-mount technology integration.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Consult Diodes Incorporated or authorized distributors for cross-reference information regarding equivalent components with matching electrical specifications and package dimensions.
FAQ
What is the maximum pulsed drain current for the DMN39M1LSS-13?
The maximum pulsed drain current (IDM) is 128 A, based on a 10µs pulse with a duty cycle of 1%.
Is the DMN39M1LSS-13 suitable for automotive applications?
For automotive applications requiring specific change control, such as parts qualified to AEC-Q100/101/104/200 and PPAP capable, customers must contact Diodes Incorporated or their local representative directly.
