DMN39M1LSSQ-13

Overview

The DMN39M1LSSQ-13 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) rating of ±20V. The device offers a low static drain-source on-resistance (RDS(ON)) of 5.5mΩ at VGS=10V and 7.5mΩ at VGS=4.5V, both measured at a continuous drain current (ID) of 15A. It supports a pulsed drain current (IDM) of 128A and operates within a junction temperature range of -55°C to +150°C. Packaged in an SO-8 format with a tape and reel quantity of 2,500 units.

Feature Summary

• Qualified to AEC-Q101 standards for automotive applications, supported by PPAP capability and manufacturing in IATF 16949 certified facilities.
• Features low input capacitance and fast switching speed to enhance power management efficiency.
• Undergoes 100% unclamped inductive switching (UIS) testing in production to ensure robust end-application reliability.
• Totally lead-free, fully RoHS compliant, and halogen and antimony free.

Applications

• Motor controls
• Backlighting
• Power-management functions
• DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel packaging configuration before procurement. Confirm that the component meets all necessary automotive qualification requirements, including AEC-Q101 compliance and PPAP documentation, if intended for regulated automotive systems. Ensure the selected package type aligns with the PCB footprint design specifications.

Selection Notes

Select this component when a 30V N-channel MOSFET with high current handling capabilities is required for automotive-grade environments. The low RDS(ON) characteristics make it suitable for efficient power switching applications. Verify that the thermal resistance values and power dissipation limits are compatible with the system's cooling infrastructure and operating temperature ranges.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered specifically to address the stringent reliability and performance demands of modern automotive electronics. The series utilizes silicon technology to provide robust switching capabilities within compact surface-mount packages.

Replacement Considerations

Consult official manufacturer substitution guides or datasheets for verified equivalent parts. Cross-referencing parameters such as BVDSS, RDS(ON), package dimensions, and thermal characteristics is essential to ensure functional compatibility without compromising system integrity.

FAQ

Is the DMN39M1LSSQ-13 suitable for automotive applications?

Yes, the device is qualified to AEC-Q101 standards, is PPAP capable, and is manufactured in IATF 16949 certified facilities, making it suitable for automotive use.

What is the maximum pulsed drain current for this MOSFET?

The maximum pulsed drain current (IDM) is rated at 128A, based on a 10µs pulse duration with a 1% duty cycle.