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The DMN4008LFG-13 is a 40V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source breakdown voltage of 40V and a continuous drain current of 14.4A at +25°C. The device offers a low on-resistance of 7.5mΩ at VGS=10V and 10mΩ at VGS=4.5V. Total gate charge is 34nC at VGS=4.5V and 74nC at VGS=10V. It operates within a junction temperature range of -55°C to +150°C and utilizes the POWERDI® 3333-8 surface-mount package.
Verify the ordering suffix '-13' corresponds to the 3000-unit tape and reel packaging configuration as specified in the manufacturer's documentation. Confirm that the component meets AEC-Q101 standards if automotive reliability requirements are necessary for the specific application environment.
Select this component when a compact footprint is required alongside low conduction losses. The device supports both 4.5V and 10V logic-level gate drive voltages. Ensure thermal management aligns with the specified thermal resistance values for the intended PCB copper layout and ambient conditions.
This part belongs to the DMN4008LFG series from Diodes Incorporated. It is housed in the POWERDI® 3333-8 case, which provides a green, lead-free, and halogen-free construction. The product is qualified to AEC-Q101 standards for high reliability.
Consult official datasheets for equivalent parts within the same family or alternative manufacturers offering matching 40V N-channel specifications in the POWERDI 3333-8 package.
The maximum pulsed drain current (IDM) is 90A, defined by a 10μs pulse duration with a 1% duty cycle.
Yes, the MOSFET includes a body diode with a maximum continuous forward current rating of 3A and a reverse recovery time of 18.5ns.