DMN4008LFG-13

DMN4008LFG-13

$0.64
  • Description:MOSFET N-CH 40V 14.4A PWRDI3333
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:43ec16f8168d Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 40V 14.4A PWRDI3333
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:14.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):3.3V, 10V
  • Rds On (Max) @ Id, Vgs:7.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:74 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:3537 pF @ 20 V
  • FET Feature:-
  • Power Dissipation (Max):1W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:POWERDI3333-8
  • Package / Case:8-PowerVDFN

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DMN4008LFG-13

Overview

The DMN4008LFG-13 is a 40V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source breakdown voltage of 40V and a continuous drain current of 14.4A at +25°C. The device offers a low on-resistance of 7.5mΩ at VGS=10V and 10mΩ at VGS=4.5V. Total gate charge is 34nC at VGS=4.5V and 74nC at VGS=10V. It operates within a junction temperature range of -55°C to +150°C and utilizes the POWERDI® 3333-8 surface-mount package.

Feature Summary

  • Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
  • Small form factor thermally efficient package enables higher density end products, occupying just 33% of the board area compared to SO-8 packages.

Applications

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Procurement Notes

Verify the ordering suffix '-13' corresponds to the 3000-unit tape and reel packaging configuration as specified in the manufacturer's documentation. Confirm that the component meets AEC-Q101 standards if automotive reliability requirements are necessary for the specific application environment.

Selection Notes

Select this component when a compact footprint is required alongside low conduction losses. The device supports both 4.5V and 10V logic-level gate drive voltages. Ensure thermal management aligns with the specified thermal resistance values for the intended PCB copper layout and ambient conditions.

Part Context

This part belongs to the DMN4008LFG series from Diodes Incorporated. It is housed in the POWERDI® 3333-8 case, which provides a green, lead-free, and halogen-free construction. The product is qualified to AEC-Q101 standards for high reliability.

Replacement Considerations

Consult official datasheets for equivalent parts within the same family or alternative manufacturers offering matching 40V N-channel specifications in the POWERDI 3333-8 package.

FAQ

What is the maximum pulsed drain current capability?

The maximum pulsed drain current (IDM) is 90A, defined by a 10μs pulse duration with a 1% duty cycle.

Does the device include an integrated body diode?

Yes, the MOSFET includes a body diode with a maximum continuous forward current rating of 3A and a reverse recovery time of 18.5ns.

DMN4008LFG-13DMN4008LFG-13
$0.64
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