DMN4008LFG-7

$0.98

Description：MOSFET N-CH 40V 14.4A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:baeffa594282 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 14.4A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：14.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：3.3V, 10V
Rds On (Max) @ Id, Vgs：7.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：74 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3537 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMN4008LFG-7

Overview

The DMN4008LFG-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 40V and a continuous drain current of 14.4A at +25°C. The device offers a low on-state resistance of 7.5mΩ at VGS=10V and 10mΩ at VGS=4.5V. Total gate charge is specified as 34nC at VGS=4.5V and 74nC at VGS=10V. It operates within a junction temperature range of -55°C to +150°C and utilizes the POWERDI® 3333-8 surface-mount package.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Small form factor thermally efficient package enables higher density end products, occupying just 33% of the board area compared to SO-8 packages.
Qualified to AEC-Q101 standards for high reliability automotive applications.
Totally lead-free, fully RoHS compliant, and halogen and antimony free.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix when purchasing. The suffix '-7' indicates packaging in reels of 2000 units. Confirm that the required quantity aligns with this standard tape and reel configuration. Ensure the component meets all applicable environmental compliance requirements relevant to your manufacturing region before finalizing procurement orders.

Selection Notes

Select this component for designs requiring a compact footprint with robust thermal dissipation capabilities. Evaluate the 40V breakdown voltage against peak circuit transients. Consider the gate charge specifications relative to the driving circuit's switching frequency requirements. Verify that the chosen PCB layout accommodates the POWERDI 3333-8 pad dimensions for optimal thermal performance.

Part Context

This part belongs to the DMN40 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered specifically for space-constrained applications where minimizing board area is critical. The series integrates advanced silicon technology to achieve low conduction losses without compromising switching speed or thermal stability.

Replacement Considerations

Consult official manufacturer documentation for verified equivalent parts. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions. Do not substitute based solely on generic electrical parameters without confirming pinout compatibility and thermal characteristics.