DMN4010LFG-7

$0.68

Description：MOSFET N-CH 40V 11.5A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:fb81bf002304 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 11.5A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：12mOhm @ 14A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：37 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1810 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：930mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMN4010LFG-7

Overview

The DMN4010LFG-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (Vds) of 40 V and a continuous drain current (Id) of 11.5 A at +25°C. The device offers a low on-state resistance (Rds(on)) of 12 mΩ at Vgs = 10 V and 15 mΩ at Vgs = 4.5 V. It utilizes the PowerDI3333-8 surface-mount package, providing high thermal efficiency in a compact form factor.

Feature Summary

Low on-state resistance to minimize power losses
Compact PowerDI3333-8 package for high-density designs
Qualified to AEC-Q101 automotive reliability standards

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify component authenticity through authorized channels. Confirm RoHS compliance and lead-free status against the latest datasheet revision. Ensure storage conditions adhere to moisture sensitivity level 1 requirements. Validate that the specific ordering suffix matches the required tape and reel quantity for production integration.

Selection Notes

Select this component for applications requiring efficient switching within a 40 V system. Evaluate thermal performance based on the specified junction-to-ambient resistance values under different mounting conditions. Consider gate charge characteristics for driving circuit compatibility. Verify that the operating temperature range meets the environmental constraints of the target application.

Part Context

This part belongs to the DMN40 series of N-channel MOSFETs from Diodes Incorporated. It is designed to balance low conduction losses with superior switching performance. The device is housed in a thermally optimized plastic package suitable for surface mount technology, targeting modern electronic systems where board space is limited.

Replacement Considerations

Check for compatible parts within the same DMN40 series family. Verify pinout compatibility and electrical parameter alignment before substitution. Ensure any alternative component meets the same AEC-Q101 qualification standards if used in automotive contexts.