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Product Detailed Parameters
- Description：MOSFET N-CH 40V 13.5A TO252-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：13.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：15mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：42 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2072 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.19W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMN4015LK3-13 is a discontinued 40V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source breakdown voltage of 40V and a continuous drain current of 20.8A at 25°C, reducing to 16.6A at 70°C. The device offers a low on-resistance of 15mΩ at VGS=10V and 20mΩ at VGS=4.5V. It operates within a temperature range of -55°C to +150°C and utilizes a TO-252-3L surface-mount package.
Feature Summary
- Designed for high efficiency power management applications with minimized on-state resistance.
- Maintains superior switching performance alongside low conduction losses.
- Compliant with RoHS standards and free from halogens or antimony compounds.
Applications
- Backlighting circuits
- DC-DC converters
- Power management functions
Procurement Notes
This component is officially marked as discontinued by the manufacturer. Verify end-of-life status before design finalization. Confirm availability through authorized distributors only. Check for product change notifications regarding final procurement windows. Ensure replacement strategies are in place due to discontinuation status.
Selection Notes
Select this part for general-purpose switching where 40V rating suffices. Evaluate thermal derating curves for PCB copper area constraints. Compare gate charge requirements against driver capabilities. Consider alternative active parts if long-term supply continuity is required for production runs.
Part Context
Part of the DMN series of N-channel enhancement mode MOSFETs. Manufactured using silicon technology in a TO-252-3L plastic case. Designed for surface mount assembly with matte tin finish terminals. Intended for use in standard electronic assemblies requiring moderate current handling.
Replacement Considerations
No specific substitute part numbers are documented in the provided datasheet. Consult manufacturer resources for cross-reference recommendations or updated product line replacements suitable for the application requirements.
