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Product Detailed Parameters
- Description：MOSFET N-CH 40V 8A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：20mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：19.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1060 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：660mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type E)
- Package / Case：6-PowerUDFN
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Overview
The DMN4020LFDE-7 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 40 V and a continuous drain current (I_D) of 8.0 A at +25°C with V_GS = 10 V. The device offers a maximum on-resistance (R_DS(ON)) of 20 mΩ at V_GS = 10 V and 8 A, or 28 mΩ at V_GS = 4.5 V and 4 A. Total gate charge (Q_g) is 19.1 nC at V_GS = 10 V. It utilizes a U-DFN2020-6 (Type E) package with a 0.6 mm profile.
Feature Summary
- Low gate threshold voltage for efficient drive requirements
- Minimized on-state resistance while maintaining superior switching performance
- Totally lead-free and fully RoHS compliant construction
Applications
- General purpose interfacing switch
- Power management functions
Procurement Notes
Verify the specific ordering suffix to confirm reel size and quantity per reel. The -7 suffix indicates a 7-inch reel containing 3000 units. Confirm that the required packaging format aligns with the manufacturing process capabilities. Ensure the component meets all environmental compliance standards relevant to the target deployment region.
Selection Notes
Select this component when a low-profile N-channel MOSFET is required for high-efficiency power management. The U-DFN2020-6 package provides a small PCB footprint suitable for space-constrained designs. Evaluate thermal dissipation requirements against the specified junction-to-ambient resistance values for the intended mounting conditions.
Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed as a new generation device focusing on minimizing on-state resistance without compromising switching speed. The product line targets general-purpose applications requiring reliable performance in compact form factors.
Replacement Considerations
Consult the manufacturer's datasheet for a list of similar parts within the same family. Verify pinout compatibility and electrical specifications before substituting with other N-channel MOSFETs in the U-DFN2020-6 package.
