DMN4020LFDEQ-7

$0.13

Description：MOSFET BVDSS: 31V~40V U-DFN2020-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:4ded86f79c86 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V U-DFN2020-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：8.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：21mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1201 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：850mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type E)
Package / Case：6-PowerUDFN

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DMN4020LFDEQ-7

Overview

The DMN4020LFDEQ-7 is a surface-mount N-channel enhancement mode MOSFET designed for automotive applications. It features a U-DFN2020-6 (Type E) case with a 0.6mm profile and a PCB footprint of 4mm². The device is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. Key electrical parameters include a drain-source voltage (BVDSS) of 40V, a maximum on-resistance (RDS(ON)) of 21mΩ at VGS=10V and ID=8A, and a continuous drain current (ID) of 8.6A at TA=+25°C.

Feature Summary

Low gate threshold voltage enabling efficient drive characteristics
Totally lead-free and fully RoHS compliant construction
Halogen- and antimony-free green device formulation
Suitable for automotive applications requiring specific change control

Applications

General purpose interfacing switch
Power management functions
Automotive electronic circuits

Procurement Notes

Verify the component matches the exact Diodes Incorporated part number DMN4020LFDEQ-7. Confirm the package type is U-DFN2020-6 (Type E). Ensure the supplier provides documentation confirming AEC-Q101 qualification and IATF 16949 manufacturing certification as specified in the datasheet.

Selection Notes

Select this component when a low-profile N-channel MOSFET is required for automotive environments. The 40V rating and 8.6A continuous current capability suit general switching tasks. Verify that the 0.6mm height constraint fits the mechanical design and that the thermal dissipation requirements align with the specified junction-to-ambient resistance values.

Part Context

This part belongs to the DMN4020LFDEQ series from Diodes Incorporated. It is an N-channel enhancement mode MOSFET specifically engineered for automotive use. The series emphasizes compliance with strict automotive quality standards while maintaining a compact physical footprint suitable for space-constrained printed circuit board layouts.

Replacement Considerations

Check for equivalent parts within the DMN4020LFDEQ family or other AEC-Q101 qualified 40V N-channel MOSFETs in U-DFN2020-6 packages. Ensure any substitute meets the same RDS(ON), ID, and thermal performance specifications.