ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 4.8A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：4.8A
- Rds On (Max) @ Id, Vgs：34mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：453pF @ 20V
- Power - Max：1.8W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
Download product information
Overview
The DMN4034SSD-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) rating of ±20V. The device provides a continuous drain current (ID) of 6.3A at 25°C, with an on-resistance (RDS(on)) of 34mΩ at VGS=10V and 59mΩ at VGS=4.5V. Total gate charge (Qg) is rated at 8nC for VGS=4.5V and 18nC for VGS=10V. Thermal characteristics include a power dissipation of 1.25W and a junction-to-ambient thermal resistance of 100°C/W. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration designed for high efficiency power management applications
- Qualified to AEC-Q101 standards for automotive and high reliability environments
- Low on-resistance combined with fast switching speed capabilities
- 100% Unclamped Inductive Switching (UIS) tested in production
Applications
- Motor control systems
- DC-DC converters
- Backlighting circuits
- Power management functions
Procurement Notes
Verify the component against the official Diodes Incorporated datasheet DS32105 Rev 2-2 to confirm electrical parameters and package dimensions. Ensure that the SOIC-8 package matches your PCB footprint requirements. Confirm RoHS compliance and halogen-free status if required by your manufacturing specifications. Validate that the sourcing channel is authorized to prevent counterfeit components.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage switching applications. The 40V rating suits standard 12V or 24V bus architectures. Evaluate the RDS(on) values at your specific gate drive voltage to ensure acceptable conduction losses. Consider the thermal resistance and power dissipation limits relative to your expected operating ambient temperatures and PCB copper area.
Part Context
This part belongs to the DMN4034 series of dual N-channel MOSFETs from Diodes Incorporated. It utilizes an SOIC-8 surface mount package molded in green compound. The product marking code is N4034SD. It is designed to minimize on-state resistance while maintaining superior switching performance for efficient power management.
Replacement Considerations
No official substitute part numbers are documented in the provided datasheet. When evaluating alternatives, verify that the replacement maintains the 40V VDS rating, compatible SOIC-8 pinout, and equivalent RDS(on) and Qg characteristics to ensure circuit functionality remains unchanged.
FAQ
What is the maximum gate-source voltage rating?
The maximum gate-source voltage (VGS) is rated at ±20V.
Is this component suitable for automotive applications?
Yes, the DMN4034SSD is qualified to AEC-Q101 standards for high reliability.
What is the typical total gate charge at VGS = 10V?
The typical total gate charge (Qg) is 18nC when tested at VGS = 10V, VDS = 20V, and ID = 6A.
