DMN4034SSS-13

$0.76

Description：MOSFET N-CH 40V 5.4A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1c839cb1b274 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 5.4A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：34mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：453 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1.56W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMN4034SSS-13

Overview

The DMN4034SSS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V(BR)DSS) of 40V and operates within a temperature range of -55°C to +150°C. The device provides a continuous drain current (ID) of 7.2A at 25°C, with a static drain-source on-resistance (RDS(on)) of 34mΩ at VGS=10V and 59mΩ at VGS=4.5V. It utilizes an SO-8 surface-mount package.

Feature Summary

Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
Qualified to AEC-Q101 standards for high reliability in automotive environments.
Manufactured using 'Green' molding compound that is RoHS compliant and free from halogens or antimony compounds.

Applications

Motor control
Backlighting
DC-DC Converters
Power management functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the standard reel quantity of 2,500 units per manufacturer specifications. Confirm compliance requirements such as RoHS and AEC-Q101 qualification against project needs. Ensure thermal design accounts for the specified junction-to-ambient resistance values under intended PCB copper coverage conditions.

Selection Notes

Select this component when a 40V N-channel MOSFET with low RDS(on) is required for compact designs. The SO-8 package suits space-constrained layouts. Evaluate gate charge parameters for switching frequency requirements. Consider the 7.2A continuous current rating relative to thermal dissipation limits on the target PCB footprint.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to balance low conduction losses with fast switching speeds. The series targets general-purpose power switching and management tasks where efficiency and reliability are prioritized over extreme voltage ratings.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the 40V V(BR)DSS, SO-8 package dimensions, and pinout configuration. Verify equivalent RDS(on) and thermal characteristics before implementation.