DMN4035L-13

$0.08

Description：MOSFET N-CH 40V 4.6A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:69a99fb207a2 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 4.6A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：42mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：574 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：720mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN4035L-13

Overview

The DMN4035L-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 40 V and a continuous drain current (I_D) of 4.6 A at +25°C ambient temperature. The device offers a maximum static drain-source on-resistance (R_DS(ON)) of 42 mΩ at V_GS = 10 V and 52 mΩ at V_GS = 4.5 V. Total gate charge (Q_g) is specified as 12.5 nC at V_GS = 10 V. Power dissipation is rated at 720 mW with a thermal resistance (R_θJA) of 171 °C/W in steady state. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Totally lead-free, fully RoHS compliant, and halogen and antimony free "Green" device.
Qualified to JEDEC standards for high reliability.

Applications

Battery Charging
Power Management Functions
DC-DC Converters
Portable Power Adaptors

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10000-unit tape and reel packaging configuration. Confirm that the component meets the required environmental specifications, including RoHS 3 compliance and the absence of intentionally added lead. Ensure the application environment remains within the specified operating temperature range of -55°C to +150°C.

Selection Notes

Select this component when a single N-channel MOSFET with a 40 V breakdown voltage and low on-resistance is required. Consider the SOT-23 package size constraints and the 720 mW power dissipation limit under standard FR-4 substrate conditions. Evaluate the gate threshold voltage characteristics against the available drive voltage levels in the target circuit design.

Part Context

This part belongs to the DMN4035 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The product line focuses on providing low on-resistance and fast switching capabilities suitable for portable electronics and power management systems. The DMN4035L variant specifically utilizes the SOT-23 case style for compact surface mount integration.

Replacement Considerations

For automotive applications requiring specific change control or AEC-Q qualification, refer to the related automotive grade part DMN4035LQ. Verify pinout compatibility and electrical parameter equivalence before substituting other N-channel MOSFETs in existing designs.

FAQ

Is the DMN4035L-13 qualified for automotive applications?

No, this specific part is not qualified for automotive use. For automotive applications requiring AEC-Q100/101/200 qualification and PPAP capability, the DMN4035LQ should be used instead.