DMN4035LQ-7

$0.55

Description：MOSFET N-CH 40V 4.6A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:23e5b3bef532 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 4.6A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：42mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：574 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：720mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN4035LQ-7

Overview

The DMN4035LQ-7 is an N-channel enhancement mode MOSFET designed for automotive applications. It features a drain-source voltage of 40V and continuous drain current ratings of 4.6A at +25°C and 3.7A at +70°C. The device offers low on-resistance, specified as 42mΩ maximum at VGS=10V and 52mΩ maximum at VGS=4.5V. It operates within a junction temperature range of -55°C to +150°C and is qualified to AEC-Q101 standards.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive use
Low on-resistance for efficient power management
Fast switching speed with low input capacitance
Totally lead-free and fully RoHS compliant

Applications

Battery charging systems
Power management functions
DC-DC converters
Portable power adaptors

Procurement Notes

Verify the specific ordering suffix matches the required packing quantity. The '-7' suffix indicates a tape and reel carrier with a standard factory pack quantity of 3000 units. Confirm that the component meets all necessary automotive qualification requirements, including IATF 16949 manufacturing certification, before finalizing procurement specifications.

Selection Notes

Select this component when designing circuits requiring a 40V N-channel MOSFET with high current handling capabilities in a compact SOT23 package. Ensure the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance. Consider the thermal resistance characteristics and operating temperature range to maintain reliability under expected load conditions.

Part Context

This part belongs to the DMN4035LQ series from Diodes Incorporated. It is specifically engineered to meet stringent automotive industry requirements. The device utilizes silicon technology and is housed in a standard SOT23 surface-mount package, making it suitable for space-constrained electronic designs.

Replacement Considerations

DMN4035L-13

FAQ

Is the DMN4035LQ-7 suitable for automotive applications?

Yes, the device is qualified to AEC-Q101 standards and is manufactured in IATF 16949 certified facilities, making it suitable for automotive applications.