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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V 40V TO252 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：12.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：36mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：453 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.12W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMN4036LK3Q-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TO-252-3 (DPAK) package with a drain-source breakdown voltage of 40 V and a continuous drain current rating of 8.5 A at ambient temperature. The device exhibits a maximum on-resistance of 36 mΩ at a gate-source voltage of 10 V and 61 mΩ at 4.5 V. Key electrical parameters include a gate charge of 9.2 nC, an input capacitance of 453 pF, and a power dissipation capacity of 2.12 W. It operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Designed for high efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
- Qualified to AEC-Q101 standards for automotive-grade reliability and high durability.
- Compliant with RoHS directives and classified as a 'Green' component.
Applications
- Backlighting circuits
- DC-DC converters
- Power management functions
Procurement Notes
Verify the specific suffix Q-13 against official Diodes Incorporated documentation to confirm AEC-Q101 automotive qualification status, as standard datasheets may list non-qualified variants. Ensure the ordering part number matches the exact package and thermal characteristics required for the target application. Cross-reference the manufacturer's latest revision history to validate component specifications before final procurement decisions.
Selection Notes
Select this component for designs requiring a 40 V N-channel MOSFET in a TO-252-3 package with moderate current handling capabilities. The low gate charge and fast switching speed make it suitable for high-frequency power conversion topologies. Evaluate thermal management requirements carefully, as the power dissipation rating is limited compared to larger packages.
Part Context
This component belongs to the DMN4036LK3 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is engineered to balance low conduction losses with efficient switching dynamics. The specific model utilizes silicon technology and is housed in a molded plastic case with matte tin finish terminals, ensuring solderability per MIL-STD-202 standards.
Replacement Considerations
Direct substitutes must match the 40 V rating, TO-252-3 package, and comparable Rds(on) and Id specifications. Verify pinout compatibility and thermal resistance values when considering alternative manufacturers or upgraded series within the same product line.
