DMN4060SVT-7

$0.47

Description：MOSFET N-CH 45V 4.8A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:cba82709b65c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 45V 4.8A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：45 V
Current - Continuous Drain (Id) @ 25°C：4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：46mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1287 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

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DMN4060SVT-7

Overview

The DMN4060SVT-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT26 surface-mount package and is designed for high-efficiency power management applications. Key electrical parameters include a drain-source breakdown voltage (V(BR)DSS) of 45 V, a maximum static drain-source on-resistance (RDS(on)) of 46 mΩ at VGS = 10 V, and a continuous drain current (ID) of 4.8 A at TA = 25°C. The device operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance
Qualified to AEC-Q101 standards for automotive-grade reliability
Compliant with RoHS directives and free from lead, halogen, and antimony

Applications

DC-DC converters
Power management functions
Backlighting circuits

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration containing 3,000 units per reel. Confirm that the component meets the required environmental compliance standards, specifically RoHS 2 and the absence of intentionally added lead, halogens, and antimony. Ensure the application environment remains within the specified thermal limits and does not involve unauthorized life support systems.

Selection Notes

Select this component when a low-profile SMD solution is required for efficient power switching in compact designs. The TSOT26 package provides a balance between thermal dissipation and board space constraints. Consider the 45V rating and 4.8A current capability against the specific load requirements of the target circuit to ensure adequate safety margins during operation.

Part Context

This part belongs to the DMN series of N-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a molded plastic TSOT26 case with a tin-finished copper leadframe. The device is classified as a 'Green' product, indicating adherence to specific environmental manufacturing policies regarding material composition and waste reduction.