DMN4800LSS-13

$0.38

Description：MOSFET N-CH 30V 9A 8SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:87d16fd33080 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 9A 8SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：16mOhm @ 9A, 10V
Vgs(th) (Max) @ Id：1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.47 nC @ 5 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：798 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.46W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMN4800LSS-13

Overview

The DMN4800LSS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 30V and a continuous drain current of 8.6A at +25°C. The device offers a maximum on-resistance of 14mΩ at VGS=10V and 20mΩ at VGS=4.5V. Total gate charge is typically 8.7nC, with turn-on delay time of 5.03ns and fall time of 8.55ns. Power dissipation is rated at 1.46W at +25°C. Operating temperature range spans from -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Qualified to AEC-Q101 standards for high reliability in automotive or demanding environments.
Totally lead-free and fully RoHS compliant, containing no purposely added lead.
Halogen and antimony free "Green" device construction.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets all applicable environmental compliance requirements relevant to the target market. Ensure the datasheet revision aligns with the manufacturing date code. Check for any specific handling instructions regarding moisture sensitivity level 1 per J-STD-020 during storage and assembly processes.

Selection Notes

Select this component when low on-resistance and fast switching are critical for system efficiency. Consider the SO-8 package constraints for thermal management and board space. Evaluate the 30V rating against peak transient voltages in the circuit. Assess gate drive capabilities against the 8.7nC total gate charge requirement for optimal switching speed.

Part Context

This part belongs to the DMN4800LSS series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in an SO-8 surface mount case. The product line focuses on minimizing on-state resistance without compromising switching performance, targeting high-efficiency power management solutions.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-reference electrical parameters such as breakdown voltage, on-resistance, and package dimensions carefully. Ensure any replacement maintains compatibility with existing PCB layouts and thermal design constraints.