DMN5040LSS-13

$0.14

Description：MOSFET N-CH 50V 5.2A 8SO T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:8ac2d12b19ca Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 50V 5.2A 8SO T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：5.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：40mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：836 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMN5040LSS-13

Overview

The DMN5040LSS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 50V drain-source voltage rating and operates within a junction temperature range of -55°C to +150°C. The device provides a maximum continuous drain current of 5.2A at 25°C ambient temperature, with a pulsed drain current capability of 25A. Static drain-source on-resistance is specified as a maximum of 40mΩ at VGS=10V and 60mΩ at VGS=4.5V. Total power dissipation reaches 1.3W in steady state under standard mounting conditions.

Feature Summary

Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
Qualified to AEC-Q101 standards to ensure high reliability for automotive and industrial environments.
Compliant with RoHS directives and fully lead-free, halogen-free, and antimony-free manufacturing processes.

Applications

Motor Control
Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging configuration containing 2,500 units per reel. Confirm that the SO-8 package dimensions align with the suggested pad layout provided in the datasheet to ensure proper thermal and electrical connection during surface mount assembly.

Selection Notes

Select this component when a 50V N-channel MOSFET is required for low-voltage power switching. The SO-8 package offers a balance between thermal dissipation and board space. Ensure gate drive voltages meet the minimum thresholds for the desired on-resistance levels, particularly if operating below 10V gate drive.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The 'LSS' designation indicates the specific pinout and package style (SO-8), while the suffix '-13' denotes the standard tape and reel packaging format used for automated surface-mount assembly processes.

Replacement Considerations

Consult official cross-reference lists or manufacturer substitution guides for verified equivalent parts. Do not assume functional compatibility based solely on matching voltage and current ratings without verifying pinout configurations and thermal characteristics.