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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V~60V SOT523 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.5 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：40 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
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Overview
The DMN52D0LT-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 50V drain-source voltage rating and operates within a junction temperature range of -55°C to +150°C. The device provides a maximum continuous drain current of 350mA at 25°C, with an on-state resistance (RDS(ON)) of 2.0Ω at VGS=5V. It utilizes a SOT523 surface-mount package.
Feature Summary
- Designed for high-efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
- Features very low gate threshold voltage and low input capacitance to support fast switching speeds.
- Includes ESD protected gate structure and low input/output leakage characteristics.
Applications
- Motor driving
- Power management functions
- Load switching
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS 3 compliance standards and is halogen-free. Ensure the selected distributor sources directly from authorized channels to guarantee product authenticity and traceability.
Selection Notes
Select this component when a compact SOT523 footprint is required for low-voltage switching tasks. The device is suitable for circuits requiring a 50V breakdown voltage and moderate current handling up to 350mA. Consider the thermal resistance limits and ensure adequate PCB copper area for heat dissipation during operation.
Part Context
This part belongs to the DMN52 series of N-channel MOSFETs from Diodes Incorporated. The 'DMN52D0LT' denotes the base device specifications, while the '-13' suffix specifically indicates the standard 10,000-piece tape and reel packaging format used for automated assembly processes.
Replacement Considerations
Consult official manufacturer documentation for verified cross-reference part numbers. Do not substitute based solely on generic electrical similarities without confirming pinout compatibility and package dimensions.
