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Product Detailed Parameters
- Description：MOSFET 2N-CH 50V 0.41A SOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：410mA (Ta)
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：42.4pF @ 25V
- Power - Max：490mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6
- Supplier Device Package：SOT-26
- Grade：-
- Qualification：-
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Overview
The DMN52D0UDM-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in an SOT-26 surface-mount package. The device features a drain-source breakdown voltage (BVDSS) of 60V. Key electrical parameters include a continuous drain current (Id) capability, a maximum gate-source voltage (Vgs) range of -8V to +8V, and a gate threshold voltage (Vgs(th)) of 500mV. The total gate charge (Qg) is specified at 8.3nC. Thermal performance includes a power dissipation (Pd) rating of 980mW and an operating temperature range from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration within a compact SOT-26 footprint for space-constrained designs.
- Enhancement mode operation with low gate threshold voltage for efficient logic-level driving.
- Silicon-based construction ensuring reliable performance across extended industrial temperature ranges.
Applications
- Low-side switching applications in portable consumer electronics.
- Load switching circuits in battery-powered devices.
- General-purpose signal switching in embedded systems.
Procurement Notes
Verify the specific ordering suffix and manufacturer part number against official Diodes Incorporated documentation to ensure component authenticity. Confirm that the received units match the specified SOT-26 package and electrical characteristics defined in the published datasheet prior to integration into production assemblies.
Selection Notes
Select this component when a dual N-channel solution is required in a small outline transistor package. Ensure the application voltage does not exceed the 60V drain-source rating and that the thermal design accommodates the 980mW power dissipation limit. Verify that the gate drive signals remain within the +/- 8V absolute maximum ratings.
Part Context
This component belongs to the DMN series of dual MOSFETs produced by Diodes Incorporated. The series is designed for general-purpose switching applications requiring multiple channels in a minimal footprint. The DMN52D0UDM-7 variant specifically offers a 60V rating, distinguishing it from lower-voltage counterparts within the same family.
Replacement Considerations
Consult official Diodes Incorporated substitution guides for verified alternatives. Cross-referencing requires matching the SOT-26 package, dual N-channel topology, and 60V BVDSS rating. Do not assume compatibility with single-channel or different voltage-rated variants without verifying pinout and electrical specifications.
