DMN52D0UDWQ-7

$0.07

Description：MOSFET 2N-CH 50V 0.35A SOT363
Series：-

SKU:99c76d194d14 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 50V 0.35A SOT363
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：50V
Current - Continuous Drain (Id) @ 25°C：350mA (Ta)
Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：42.3pF @ 25V
Power - Max：300mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：Automotive
Qualification：AEC-Q101

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DMN52D0UDWQ-7

Overview

The DMN52D0UDWQ-7 is a 50V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 50V and a gate-source voltage rating of ±12V. The device provides a continuous drain current of 350mA at +25°C, with an on-resistance (RDS(ON)) ranging from 1.6Ω to 4.0Ω depending on the gate drive voltage. Packaged in a compact SOT363 form factor, it includes integrated gate protection diodes.

Feature Summary

AEC-Q101 qualified for automotive reliability standards
Integrated gate protection diodes for enhanced robustness
Low input capacitance supporting fast switching speeds
Halogen-free and fully RoHS compliant construction

Applications

Automotive load switches
Level switching circuits
General-purpose low-voltage power management

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm packaging quantity and carrier type. Confirm that the component meets AEC-Q101 qualification requirements if intended for automotive use. Ensure compliance with IATF 16949 manufacturing standards as specified in the datasheet.

Selection Notes

Select this component when a dual-channel configuration or integrated gate protection is required within a minimal footprint. Evaluate the RDS(ON) specifications relative to the available gate drive voltage to ensure adequate current handling capabilities. Consider the thermal resistance characteristics for the specific PCB layout constraints.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes silicon technology and is housed in a molded plastic SOT363 package. The product line is designed to meet stringent automotive industry requirements through PPAP capability and specialized quality controls.

Replacement Considerations

The datasheet lists the DMN52D0UDWQ-13 as a direct alternative differing only in reel packing quantity. Verify pinout compatibility and electrical parameters before substituting with other manufacturers' parts.