DMN52D0UQ-13

$0.04

Description：MOSFET BVDSS: 41V~60V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:2b0f16136e51 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.5 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：39 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：500mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN52D0UQ-13

Overview

The DMN52D0UQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 50V drain-source breakdown voltage and operates within a temperature range of -55°C to +150°C. The device provides a maximum on-resistance of 4Ω at VGS=1.8V, 2.5Ω at VGS=2.5V, and 2Ω at VGS=5V. Continuous drain current reaches 400mA at 25°C. Packaged in an SOT-23 surface-mount format, it includes internal ESD protection and meets AEC-Q101 automotive qualification standards.

Feature Summary

AEC-Q101 qualified for automotive applications with PPAP capability
Integrated gate protection diode providing ESD protection
Low gate threshold voltage enabling efficient low-voltage drive
Lead-free and RoHS compliant construction

Applications

Load switches
Level switches

Procurement Notes

Verify the specific ordering suffix matches the required packing quantity. The -13 suffix indicates a reel packaging configuration containing 10,000 units per carrier. Confirm that the component meets the necessary IATF 16949 manufacturing requirements if the application demands strict automotive change control protocols.

Selection Notes

Select this component when a small form factor is required alongside automotive reliability standards. The low gate threshold voltage supports operation with logic-level drivers. Ensure the thermal management design accounts for the junction-to-ambient resistance values provided in the datasheet under steady-state conditions.

Part Context

This part belongs to the DMN52D0UQ series of N-channel MOSFETs designed specifically for automotive environments. It is produced in IATF 16949 certified facilities to ensure consistent quality and traceability. The product line emphasizes robust performance under varying thermal loads while maintaining compliance with environmental directives.

Replacement Considerations

Consult official cross-reference lists from Diodes Incorporated for verified substitutes. Verify pinout compatibility and electrical parameter margins before substituting any alternative components.