DMN52D0UQ-7

$0.04

Description：MOSFET BVDSS: 41V~60V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:b7e073363397 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.5 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：39 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：500mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN52D0UQ-7

Overview

The DMN52D0UQ-7 is a 50V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 50V and a continuous drain current (ID) of 400mA at +25°C. The device offers low on-resistance, specified as 2Ω max at VGS=5V, 2.5Ω max at VGS=2.5V, and 4Ω max at VGS=1.8V. It operates within a temperature range of -55°C to +150°C and is housed in an SOT23 package.

Feature Summary

AEC-Q101 qualified for automotive applications with PPAP capability
Very low gate threshold voltage (1.0V max)
Low input capacitance and fast switching speed
ESD protected with integrated gate protection diode

Applications

Load switches
Level switches

Procurement Notes

Verify the specific ordering suffix (-7 or -13) against the required packing quantity before procurement. Confirm that the component meets AEC-Q101 qualification standards if intended for automotive use. Ensure the design accounts for the thermal resistance values provided in the datasheet under the expected operating conditions.

Selection Notes

Select this component when a low-voltage, small-footprint N-channel MOSFET is required for automotive-grade reliability. Consider the low gate threshold voltage for compatibility with low-drive logic circuits. Evaluate the power dissipation limits relative to the PCB copper area and ambient temperature constraints.

Part Context

This part belongs to the DMN52D0U series from Diodes Incorporated, designed specifically for stringent automotive requirements. It is manufactured in IATF 16949 certified facilities and supports specific change control protocols. The device is lead-free, fully RoHS compliant, and halogen/antimony free.

Replacement Considerations

Consult official Diodes Incorporated documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before substitution.