DMN52D0UV-7

Overview

The DMN52D0UV-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 50V drain-source breakdown voltage and an ultra-small SOT563 surface-mount package. The device provides low on-state resistance, with maximum values of 4Ω at VGS=1.8V, 2.5Ω at VGS=2. very low gate threshold voltage (max 1.0V), and fast switching speeds. Key electrical parameters include a continuous drain current of 480mA at +25°C, total power dissipation of 0.48W, and thermal resistance of 261°C/W. Input capacitance is typically 39pF.

Feature Summary

• Dual N-channel configuration in an ultra-small SOT563 package
• Very low gate threshold voltage for efficient drive requirements
• Low input capacitance and fast switching speed
• ESD protected with integrated gate protection diodes

Applications

• Battery management systems
• Power management functions
• Load switches

Procurement Notes

Verify the specific ordering suffix to confirm packaging quantity. The -7 suffix indicates a 3,000-unit reel. Confirm RoHS compliance and green material status against current regulatory standards before finalizing procurement specifications.

Selection Notes

Select this component when space constraints require a dual N-channel solution in an SOT563 footprint. Ensure the application logic levels align with the 1.0V maximum gate threshold voltage. Verify that the 50V breakdown rating meets the circuit's maximum operating voltage requirements.

Part Context

This part belongs to the DMN series of dual N-channel MOSFETs from Diodes Incorporated. It is designed for high-efficiency power management applications where small form factors and low on-resistance are critical design parameters.

Replacement Considerations

No official substitutes are listed in the datasheet. When evaluating alternatives, verify pinout compatibility within the SOT563 package and ensure equivalent BVDSS and RDS(ON) characteristics.