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Product Detailed Parameters
- Description：MOSFET 2N-CH 50V 0.48A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：480mA (Ta)
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：39pF @ 25V
- Power - Max：480mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMN52D0UVQ-7 is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a 50V drain-source breakdown voltage and operates within a temperature range of -55°C to +150°C. The device offers low on-resistance, with maximum values of 4Ω at VGS=1.8V, 2.5Ω at VGS=2.5V, and 2Ω at VGS=5V. Continuous drain current reaches 480mA at 25°C. Packaged in an ultra-small SOT563 surface-mount format, it includes integrated gate protection diodes.
Feature Summary
- Dual N-channel configuration with integrated gate protection diodes
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
- Low gate threshold voltage enabling efficient drive from low logic levels
- Totally lead-free and fully RoHS compliant construction
Applications
- Battery management systems
- Power management functions
- Load switches
Procurement Notes
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantity and carrier type. Confirm that the component meets all required environmental compliance standards for the target application before finalizing procurement orders.
Selection Notes
Select this component when designing circuits requiring dual N-channel switching in a minimal footprint. Ensure the gate drive voltage aligns with the specified thresholds to achieve optimal on-resistance performance. Verify thermal dissipation requirements against the junction-to-ambient resistance limits provided in the datasheet.
Part Context
This part belongs to the DMN series of dual MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a molded plastic SOT563 package. The product line is specifically engineered to meet stringent automotive reliability standards while maintaining high efficiency in power management tasks.
Replacement Considerations
Consult official manufacturer substitution guides for verified alternatives. Do not assume cross-compatibility based solely on pinout or voltage ratings. Verify that any replacement component matches the specific AEC-Q101 qualification and PPAP requirements if used in automotive contexts.
FAQ
What is the maximum continuous drain current rating?
The maximum continuous drain current is 480mA at an ambient temperature of +25°C.
Is this component suitable for automotive environments?
Yes, the DMN52D0UVQ is qualified to AEC-Q101 standards and is capable of PPAP submission for automotive applications.
Does the device include internal protection features?
Yes, the equivalent circuit diagram indicates the presence of integrated gate protection diodes for both channels.
