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Product Detailed Parameters
- Description：MOSFET 2N-CH 50V 0.43A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：430mA (Ta)
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：41pF @ 25V
- Power - Max：500µW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：-
- Qualification：-
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Overview
The DMN52D0UVT-13 is a 50V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 50V and a continuous drain current (ID) of 430mA at +25°C. The device offers low on-state resistance, specified as 2.0Ω max at VGS=5.0V and ID=50mA, and 4.0Ω max at VGS=1.8V. It operates within a junction temperature range of -55°C to +150°C with a total power dissipation of 0.5mW in standard mounting configurations. The component utilizes a TSOT26 surface-mount package.
Feature Summary
- Low on-resistance for high-efficiency power management
- Very low gate threshold voltage for easy drive compatibility
- Fast switching speed with low input capacitance
- ESD protected and fully RoHS compliant
Applications
- General-purpose interfacing switches
- Power-management functions
- High-efficiency power circuits
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit reel quantity carrier when sourcing components. Confirm that the requested part matches the exact manufacturer designation to ensure compatibility with design specifications. Always cross-reference the latest datasheet revision for any updates to mechanical or electrical parameters before finalizing procurement orders.
Selection Notes
Select this component for applications requiring a compact N-channel MOSFET with low on-resistance and fast switching capabilities. Ensure the operating voltage does not exceed the 50V drain-source rating and that the thermal design accommodates the 0.5mW power dissipation limit under steady-state conditions. Verify that the gate drive voltage meets the requirements for the desired on-resistance performance level.
Part Context
This component belongs to the DMN52D0UVT series from Diodes Incorporated, designed for general-purpose switching and power management tasks. It is housed in a TSOT26 package, which provides a small footprint suitable for space-constrained designs. The series emphasizes low on-resistance and fast switching to support efficient power conversion applications.
Replacement Considerations
Consult the official Diodes Incorporated documentation for qualified replacement parts. Verify pinout compatibility and electrical parameter equivalence before substituting. No direct substitute part numbers are listed in the provided source material.
