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Product Detailed Parameters
- Description：MOSFET 2N-CH 50V 0.43A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：430mA (Ta)
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：41pF @ 25V
- Power - Max：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMN52D0UVTQ-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 50V drain-source voltage rating and operates within a junction temperature range of -55°C to +150°C. The device provides a maximum continuous drain current of 430mA at 25°C, with an on-resistance (RDS(ON)) of 2.0Ω at VGS=5.0V and 2.5Ω at VGS=2.5V. Packaged in a TSOT26 surface-mount format, it includes two independent channels. Electrical characteristics include a gate threshold voltage of 1.0V maximum and total gate charge of 0.7nC at VGS=4.5V.
Feature Summary
- Dual-channel configuration for space-efficient circuit design
- Qualified for automotive applications under AEC-Q101 standards
- Low on-resistance optimized for logic-level gate drive voltages
- ESD protected with low input/output leakage currents
Applications
- General-purpose interfacing switches
- Power-management functions
- Automotive electronic control units
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and carrier type. Confirm that the component meets RoHS 3 compliance and halogen-free requirements for your assembly process. Ensure the supplier source is authorized to guarantee traceability and adherence to IATF 16949 manufacturing standards required for automotive-grade parts.
Selection Notes
Select this component when a dual N-channel MOSFET is required in a compact TSOT26 package. Verify that the system's gate drive voltage supports the specified RDS(ON) performance levels. Consider the thermal resistance of 244°C/W for steady-state operation on minimal copper layouts when calculating power dissipation limits.
Part Context
This part belongs to the DMN52D0UVTQ series from Diodes Incorporated, designed specifically for automotive environments. It is manufactured in IATF 16949 certified facilities and supports PPAP documentation. The '13' suffix indicates a 10,000-unit reel packing quantity.
Replacement Considerations
No official substitutes are listed in the datasheet. When evaluating alternatives, ensure the replacement matches the TSOT26 footprint, maintains a 50V BVDSS rating, and supports the required 430mA continuous current capability.
