DMN53D0L-13

$0.25

Description：MOSFET N-CH 50V 500MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3ea895e4c978 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 50V 500MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：46 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：370mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Download product information

DMN53D0L-13

Overview

The DMN53D0L-13 is an N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 50V and a continuous drain current (ID) of 500mA at +25°C. The device offers low on-state resistance, specified as 1.6Ω at VGS = 10V with ID = 500mA, and 2.5Ω at VGS = 4.5V with ID = 200mA. It operates within a junction temperature range of -55°C to +150°C and is housed in a surface-mount SOT23 package.

Feature Summary

Designed for high-efficiency power-management applications through minimized on-state resistance and superior switching performance.
Features very low gate threshold voltage and low input capacitance for efficient control.
Includes ESD protection and is fully RoHS compliant, halogen-free, and antimony-free.
Qualified to JEDEC standards for high reliability.

Applications

High-efficiency power management circuits
General-purpose switching applications

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration when sourcing components. Confirm that the required automotive-grade variant, designated as DMN53D0LQ, is not necessary for the intended application, as this standard version meets general industrial reliability standards rather than specific automotive qualification requirements.

Selection Notes

Select this component for designs requiring a compact N-channel MOSFET with moderate current handling capabilities. Ensure the driving circuit can provide sufficient gate-source voltage to achieve the lowest possible on-resistance values. Consider the thermal characteristics and maximum power dissipation limits when designing heat dissipation strategies for densely packed printed circuit boards.

Part Context

This part belongs to the DMN53 series of N-channel enhancement mode field effect transistors produced by Diodes Incorporated. The series focuses on providing low on-resistance and fast switching speeds within small surface-mount packages. The DMN53D0L specifically targets applications where space constraints and energy efficiency are critical design parameters.

Replacement Considerations

An automotive-compliant alternative is available under the separate datasheet designation DMN53D0LQ. Verify if the specific environmental or reliability qualifications required for the target application necessitate this automotive-grade variant over the standard industrial version.