DMN53D0LT-7

$0.20

Description：DIODE
Series：-
Mfr：Diodes Incorporated
Package：Bulk

SKU:4ab70b780a05 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：DIODE
Series：-
Mfr：Diodes Incorporated
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：46 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：300mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-523
Package / Case：SOT-523

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DMN53D0LT-7

Overview

The DMN53D0LT-7 is an N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 50V and a continuous drain current (ID) of 350mA at +25°C. The device offers low on-state resistance, specified as 1.6Ω max at VGS=10V/ID=500mA and 2.5Ω max at VGS=4.5V/ID=200mA. It operates within a junction temperature range of -55°C to +150°C with a total power dissipation of 300mW. Packaged in an ultra-small SOT523 surface mount case, it includes internal gate protection diodes.

Feature Summary

Ultra-small SOT523 surface mount package for space-constrained designs
Low on-resistance optimized for high efficiency power management
Very low gate threshold voltage enabling easy drive compatibility
ESD protected to 2kV with fast switching speed characteristics

Applications

Motor driving circuits
Power management functions
Load switching applications

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance standards and is halogen-free if required by your manufacturing specifications. Ensure the procurement channel is authorized to guarantee product authenticity and traceability.

Selection Notes

Select this component when a compact N-channel MOSFET with moderate current handling capabilities is required. The low gate threshold voltage makes it suitable for logic-level control applications. Consider the thermal resistance and power dissipation limits relative to the expected operating environment and PCB copper area available for heat spreading.

Part Context

This part belongs to the DMN53D0L series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is designed to minimize on-state resistance while maintaining superior switching performance. The DMN53D0LT-7 variant specifically utilizes the SOT523 package and is supplied in standard tape and reel format for automated assembly processes.