DMN53D0LTQ-7

$0.21

Description：MOSFET BVDSS: 41V~60V SOT523 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c530cab54d18 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V SOT523 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：46 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：300mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-523
Package / Case：SOT-523

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DMN53D0LTQ-7

Overview

The DMN53D0LTQ-7 is an N-channel enhancement mode MOSFET in a SOT523 package. It features a drain-source voltage of 50V and continuous drain currents of 350mA at 25°C and 280mA at 70°C. The on-resistance is 1.6Ω at VGS=10V and 2.5Ω at VGS=4.5V. Gate threshold voltage ranges from 0.8V to 1.5V. Total gate charge is 1.4nC at VGS=10V and 0.6nC at VGS=4.5V. Power dissipation is 300mW with a thermal resistance of 420°C/W. Operating temperature spans -55°C to +150°C.

Feature Summary

AEC-Q101 qualified for automotive applications
Ultra-small surface mount SOT523 package
Low input capacitance and fast switching speed
Totally lead-free, RoHS compliant, and halogen/antimony free

Applications

Motor driving
Power management functions
Load switching

Procurement Notes

Verify the specific ordering suffix (e.g., -7 or -13) against the required reel quantity before procurement. Confirm that the component meets AEC-Q101 qualification standards if utilized in automotive environments. Ensure the design accommodates the specified thermal resistance and power dissipation limits under expected operating conditions.

Selection Notes

Select this component when a compact N-channel MOSFET with low on-resistance is required for load switching or motor control. The low gate threshold voltage supports efficient drive from low-voltage logic sources. Verify that the 50V breakdown voltage and current ratings align with the maximum circuit demands.

Part Context

This part belongs to the DMN53D0L series of N-channel enhancement mode field effect transistors manufactured by Diodes Incorporated. It is designed specifically to meet stringent automotive requirements, supported by PPAP documentation and production in IATF 16949 certified facilities.