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Product Detailed Parameters
- Description：MOSFET N-CH 50V 360MA SOT323
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：360mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：2Ohm @ 270mA, 10V
- Vgs(th) (Max) @ Id：1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：1.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：45.8 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：320mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The DMN53D0LW-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 50V and a gate-source voltage (VGSS) rating of ±20V. The device provides a continuous drain current (ID) of 360mA at TA = +25°C with VGS = 10V, and 250mA at VGS = 5V. The static drain-source on-resistance (RDS(ON)) is specified as 2.0Ω max at VGS = 10V and 3.0Ω max at VGS = 5V. Total gate charge (Qg) is 1.2nC at VGS = 10V. Operating temperature range spans from -55°C to +150°C.
Feature Summary
- Designed for high-efficiency power management applications with minimized on-state resistance.
- Features low input capacitance and fast switching speed characteristics.
- Includes an ESD protected gate structure for enhanced reliability.
Applications
- DC-DC converters
- Battery operated systems
- Solid-state relays
- Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the standard SOT323 package packed in 3,000-unit tape and reel carriers. Confirm that the required automotive grade parts are identified by the Q-suffix designation, as this standard part does not inherently include AEC-Q qualification or PPAP capability without that specific suffix.
Selection Notes
Select this component when a compact N-channel MOSFET is required for low-voltage switching within a 50V system. The SOT323 package offers space efficiency for dense PCB layouts. Ensure the driving circuit can provide sufficient gate voltage to achieve the lower RDS(ON) values if minimizing conduction losses is critical for the thermal design.
Part Context
This component belongs to the DMN53D0LW series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated under the DiodesZetex brand. It utilizes silicon technology and is housed in a standard SOT323 surface-mount package. The product line targets general-purpose switching and power management tasks in consumer and industrial electronics.
Replacement Considerations
DMN53D0LDW-7: Dual N-channel variant in SOT-363 package.
FAQ
What is the typical turn-on rise time for the DMN53D0LW-7?
The typical turn-on rise time (tR) is 2.5 ns, measured under conditions of VDD = 30V, VGS = 10V, RG = 25Ω, and ID = 200mA.
Is the DMN53D0LW-7 qualified for automotive applications?
No, this specific part number is not qualified to AEC-Q standards. For automotive applications requiring specific change control and AEC-Q100/101/104/200 qualification, customers must refer to the related automotive grade parts with the Q-suffix.
