DMN53D0U-7

$0.20

Description：MOSFET N-CH 50V 300MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:eab96bc0fbd1 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 50V 300MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：37.1 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：520mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN53D0U-7

Overview

The DMN53D0U-7 is an N-channel enhancement mode MOSFET in a SOT-23 package. It features a drain-source voltage of 50V and continuous drain current of 300mA at 25°C. The on-resistance is 2Ω at VGS=5V, 2.5Ω at VGS=2.5V, and 3Ω at VGS=1.8V. Gate threshold voltage ranges from 0.4V to 1.0V. Total gate charge is 0.6nC. Input capacitance is 37.1pF. Power dissipation is 520mW with thermal resistance of 246°C/W. Operating temperature spans -55°C to +150°C.

Feature Summary

Designed for high efficiency power management applications by minimizing on-state resistance while maintaining superior switching performance.
Qualified to AEC-Q101 standards for high reliability.
Totally lead-free and fully RoHS compliant, halogen and antimony free.

Applications

High efficiency power management

Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity. Confirm that the component meets all applicable environmental compliance requirements for the target market. Ensure the device is sourced through authorized channels to guarantee authenticity and traceability. Check for any recent product change notices regarding assembly sites or material specifications.

Selection Notes

Select this component when low on-resistance and fast switching are critical for small-signal power management. The low gate threshold voltage allows compatibility with various logic levels. Consider the thermal resistance and power dissipation limits for the intended operating environment. Verify that the SOT-23 package dimensions fit the available PCB space.

Part Context

This part belongs to the DMN53 series of N-channel enhancement mode field effect transistors manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a standard SOT-23 surface mount case. The device is designed to offer a balance between conduction losses and switching speed.

Replacement Considerations

Check datasheets for alternative parts offering similar 50V ratings and comparable RDS(ON) values. Ensure pinout compatibility and package dimensions match exactly. Verify that replacement components meet the same AEC-Q101 qualification if automotive reliability is required.