DMN5L06DWK-7-01

Description：MOSFET 2N-CH 50V 0.305A SOT363
Series：-

SKU:cadcebeef2f9 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 50V 0.305A SOT363
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：50V
Current - Continuous Drain (Id) @ 25°C：305mA (Ta)
Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
Power - Max：250mW (Ta)
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

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DMN5L06DWK-7-01

Overview

The DMN5L06DWK-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (Vdss) of 50 V and a continuous drain current (Id) of 305 mA at 25°C. The device has a gate-source threshold voltage (Vgs(th)) of 1.0 V max at 250 µA. Static drain-source on-resistance (Rds(on)) is specified as 2.0 Ω at Vgs = 5.0 V, Id = 50 mA, and 3.0 Ω at Vgs = 1.8 V, Id = 50 mA. Total power dissipation (Pd) is 250 mW at 25°C ambient temperature. The component is housed in an SOT363 surface mount package.

Feature Summary

Dual N-channel configuration integrated into a single ultra-small surface mount package
Fast switching speed with low input capacitance and low gate charge
ESD protection rated up to 2kV for enhanced reliability
Qualified to AEC-Q101 standards for high-reliability automotive applications

Applications

Battery management systems
Power switches in portable devices
Load control circuits
Automotive electronics modules

Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity. Confirm compliance with RoHS and halogen-free requirements if environmental regulations apply. Check for the 'Not Recommended for New Design' notice and evaluate alternative components for new projects. Ensure the supplier provides valid traceability documentation for the manufacturing date code.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage switching applications. Consider the 50 V breakdown voltage and 305 mA current limits against circuit demands. Evaluate the thermal resistance of 500 °C/W for heat dissipation constraints. Verify that the logic-level gate threshold supports the available drive voltage levels in the design.

Part Context

This part belongs to the DMN series of dual N-channel MOSFETs from Diodes Incorporated. It utilizes the SOT363 case outline, which houses two independent channels in a six-terminal surface mount footprint. The device is designed for general-purpose switching and load control tasks where space efficiency is critical.

Replacement Considerations

The datasheet explicitly recommends using DMN61D9UDW as a replacement or alternative for new designs due to the 'Not Recommended for New Design' status of this component.