DMN5L06K-7

$0.06

Description：MOSFET N-CH 50V 300MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:fa9d3019ec6c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 50V 300MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：350mW (Ta)
Operating Temperature：-65°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN5L06K-7

Overview

The DMN5L06K-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT23 surface-mount package. It features a drain-source voltage (Vdss) of 50V and a continuous drain current (Id) of 300mA at 25°C. The device offers a maximum gate threshold voltage of 1.0V and a static drain-source on-resistance (Rds(on)) of 2.0Ω at Vgs=5.0V, 50mA. Total power dissipation is rated at 350mW with a thermal resistance of 357°C/W. Operating temperature ranges from -65°C to +150°C.

Feature Summary

Low on-resistance for efficient power handling
Very low gate threshold voltage enabling easy drive compatibility
Fast switching speed with low input capacitance
ESD protection up to 2kV

Applications

Notebook battery power management
Load switches
Level switches

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance standards and is halogen-free as specified in the manufacturer's documentation. Ensure the design accounts for the 'Not Recommended for New Design' status indicated in the datasheet before finalizing procurement plans.

Selection Notes

Select this component when a 50V N-channel MOSFET with moderate current capability is required. The low gate threshold voltage makes it suitable for logic-level driving applications. Consider the thermal constraints due to the high junction-to-ambient thermal resistance in the small SOT23 package. Evaluate the trade-off between the relatively high on-resistance and the compact form factor for space-constrained designs.

Part Context

This part belongs to the DMN5L06 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It shares similar electrical characteristics with other variants in the family but differs in packaging and specific parameter tolerances. The series is designed for portable electronics and battery-powered devices requiring efficient power switching in small footprints.

Replacement Considerations

Check for automotive-compliant alternatives such as the DMN5L06KQ if higher reliability standards are required. Verify pinout compatibility and electrical parameters against potential substitutes to ensure seamless integration without circuit redesign.