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Product Detailed Parameters
- Description：MOSFET N-CH 50V 280MA SOT-523
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：280mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：150mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
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Overview
The DMN5L06TK-7 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (Vdss) of 50 V and a continuous drain current (Id) of 280 mA at ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 2 ohms at Vgs = 5 V and Id = 50 mA, with a gate threshold voltage (Vgs(th)) of 1.2 V max at 250 µA. Maximum power dissipation is 150 mW at Ta = 25°C. It operates within a junction temperature range of -55°C to +150°C and is housed in an SOT-523 package.
Feature Summary
- Single N-channel configuration for discrete switching applications
- Low gate threshold voltage enabling efficient drive from low-voltage logic
- Ultra-small SOT-523 surface-mount package for space-constrained designs
- High thermal stability with extended operating temperature range
Applications
- Portable battery-powered devices requiring small form factor switches
- Low-current signal routing and load switching
- General-purpose discrete switching in consumer electronics
- Power management circuits for mobile communication equipment
Procurement Notes
Verify the complete part number including suffixes against official Diodes Incorporated documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer prior to ordering. Ensure storage conditions adhere to moisture sensitivity level requirements specified in the datasheet to prevent package damage during soldering processes.
Selection Notes
Select this component when a single N-channel MOSFET with 50 V breakdown and moderate current handling is required in minimal footprint. Compare Rds(on) performance at specific gate voltages against alternative packages if higher current capacity is needed. Evaluate thermal resistance characteristics relative to PCB copper area constraints. Ensure gate drive voltage aligns with the low threshold specification for optimal conduction efficiency in low-power systems.
Part Context
This device belongs to the DMN5L06 series of N-channel MOSFETs from Diodes Incorporated. The series offers various package options including dual configurations and different footprints to suit diverse design needs. The TK-7 suffix specifically denotes the single-channel variant in the compact SOT-523 case, optimized for high-density surface mount assembly in portable and handheld electronic applications.
Replacement Considerations
Consult official cross-reference lists from Diodes Incorporated for verified substitutes. Ensure replacement parts match the 50 V Vdss, SOT-523 package, and electrical characteristics such as Rds(on) and Vgs(th). Verify pinout compatibility and thermal performance before implementation.
