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Product Detailed Parameters
- Description：MOSFET 2N-CH 50V 0.28A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：280mA
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
- Power - Max：250mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The DMN5L06VK-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (Vdss) of 50 V and a continuous drain current (Id) of 280 mA at 25°C ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 3 Ω at Vgs = 5 V and Id = 50 mA, with a gate threshold voltage (Vgs(th)) of 1 V max at Id = 250 µA. Power dissipation is rated at 250 mW at Ta = 25°C. The component operates within a junction temperature range of -55°C to +150°C and is housed in an ultra-small SOT-563 surface-mount package.
Feature Summary
- Dual N-channel configuration for space-efficient circuit design
- Ultra-small SOT-563 surface-mount package
- Low input capacitance and fast switching speed
- ESD protection up to 2 kV
Applications
- Battery management systems
- Portable consumer electronics
- Signal switching applications
Procurement Notes
Verify the specific suffix against official Diodes Incorporated documentation to confirm pinout and electrical tolerances. Ensure the procurement channel provides valid traceability for AEC-Q101 qualified automotive-grade components. Confirm RoHS compliance status through manufacturer certificates prior to integration into regulated supply chains.
Selection Notes
Select this component for designs requiring dual N-channel isolation in minimal footprint constraints. Evaluate thermal performance carefully due to the low power dissipation rating of 250 mW. Compare Rds(on) specifications against load requirements to ensure efficient conduction losses are maintained within acceptable limits for the target application environment.
Part Context
This part belongs to the DMN5L series of dual N-channel MOSFETs from Diodes Incorporated. The series emphasizes miniaturization and reliability for portable devices. Similar variants include the DMN5L06TK-7 and DMN5L06DWK-7, which share comparable electrical characteristics but differ in packaging or specific parameter tolerances as defined by their respective datasheets.
Replacement Considerations
Potential substitutes include the DMN5L06TK-7 and DMN5L06DWK-7. Verify pin compatibility and exact Rds(on) values before substitution. Cross-reference with other manufacturers' dual N-channel MOSFETs only if electrical parameters match precisely.
