DMN5L06WK-7

$0.28

Description：MOSFET N-CH 50V 300MA SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:7862210cb981 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 50V 300MA SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：250mW (Ta)
Operating Temperature：-65°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

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DMN5L06WK-7

Overview

The DMN5L06WK-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (Vdss) of 50 V and a continuous drain current (Id) of 300 mA at 25°C. The device has a gate-source threshold voltage (Vgs(th)) of 1.0 V max at 250μA. Static drain-source on-resistance (Rds(on)) is specified as 3.0 Ω at Vgs=1.8V, 2.5 Ω at Vgs=2.5V, and 2.0 Ω at Vgs=5.0V, all tested at Id=50mA. Total power dissipation (Pd) is 250 mW at 25°C ambient temperature.

Feature Summary

Low on-resistance for efficient switching
Very low gate threshold voltage
Low input capacitance and fast switching speed
ESD protected up to 2kV

Applications

Battery protection circuits
Power management applications
General purpose switching

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging quantity of 3000 units. Confirm that the component is sourced from authorized channels to ensure compliance with RoHS and lead-free standards. Check for availability of the automotive-compliant variant if high reliability is required.

Selection Notes

Select this component for low-voltage, low-current switching applications requiring small surface-mount packages. Consider the thermal resistance of 500 °C/W when designing PCB layouts. Evaluate the trade-off between low Rds(on) and package size constraints for portable devices.

Part Context

This part belongs to the DMN5L06 series of N-channel enhancement mode MOSFETs. It is designed for general-purpose switching in consumer electronics and battery-powered devices. The SOT-323 package provides an ultra-small footprint suitable for space-constrained designs.