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Product Detailed Parameters
- Description：MOSFET N-CH 50V 300MA SOT323
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：250mW (Ta)
- Operating Temperature：-65°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The DMN5L06WKQ-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (Vdss) of 50V and a continuous drain current (Id) of 305mA at 25°C. The device exhibits a gate-source threshold voltage of 1V at 250uA and a typical on-resistance (Rds(on)) of 2Ω at 50mA with a 5V gate drive. Maximum power dissipation is rated at 250mW at an ambient temperature of 25°C. This component is housed in an ultra-small surface mount package designed for low input capacitance and fast switching speeds.
Feature Summary
- Dual N-channel configuration within a single ultra-small surface mount package
- Low on-resistance characteristics optimized for efficient power handling
- Very low gate threshold voltage enabling direct logic interface compatibility
- ESD protection rated up to 2kV for enhanced circuit reliability
Applications
- Battery protection circuits in portable devices
- Load switches for low-power consumer electronics
- Power management modules in automotive infotainment systems
- Signal routing in industrial control interfaces
Procurement Notes
Verify the specific suffix 'WKQ' against the manufacturer's official datasheet to confirm package type, tape-and-reel specifications, and RoHS compliance status. Ensure the ordering part number matches the exact electrical parameters required for the target application design. Cross-reference the document revision date to guarantee access to the most current technical specifications and mechanical drawings.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage applications. The 50V rating and 305mA current capacity suit small-signal switching tasks. Consider the 2Ω on-resistance for efficiency calculations in battery-powered designs. Verify that the SOT-323 or similar small outline package fits the PCB footprint constraints of the final assembly.
Part Context
This device belongs to the DMN series of dual N-channel MOSFETs from Diodes Incorporated. These components are engineered for high-density mounting in space-constrained environments. The series typically targets automotive and industrial markets requiring AEC-Q101 qualification where applicable. The dual configuration allows for independent control of two channels within a minimal footprint.
Replacement Considerations
Consult the manufacturer's official substitution guide for verified alternatives. Generic equivalents may differ in threshold voltage or package dimensions. Ensure any substitute maintains the 50V Vdss rating and compatible Rds(on) values. Verify pinout compatibility before implementation to prevent circuit damage.
