DMN6013LFG-13

DMN6013LFG-13

$0.25
  • Description:MOSFET N-CH 60V 10.3A PWRDI3333
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)

SKU:380806eb841e Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:MOSFET N-CH 60V 10.3A PWRDI3333
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:10.3A (Ta), 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:13mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:55.4 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2577 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):1W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:POWERDI3333-8
  • Package / Case:8-PowerVDFN

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DMN6013LFG-13

Overview

The DMN6013LFG-13 is a surface-mount N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 package. It features a drain-source voltage (Vdss) of 60 V and a maximum continuous drain current (Id) of 10.3 A at Ta=+25°C, rising to 45 A at Tc=+25°C. The device exhibits a low on-state resistance (Rds(on)) of 13 mΩ max at Vgs=10V and 18 mΩ max at Vgs=4.5V. Total gate charge (Qg) is 55.4 nC max at Vgs=10V. Thermal characteristics include a power dissipation of 1 W at Ta=+25°C with a junction-to-ambient thermal resistance of 123 °C/W.

Feature Summary

  • Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
  • Small form factor thermally efficient package enables higher density end products.
  • Occupies just 33% of board area compared to SO-8 packages, enabling smaller end product designs.

Applications

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Procurement Notes

Verify the ordering suffix matches the required packaging quantity; DMN6013LFG-13 indicates a 3000-unit tape and reel, whereas -7 denotes 2000 units. Confirm RoHS compliance and lead-free status as specified by the manufacturer's green product definitions. Ensure the PowerDI3333-8 footprint aligns with the suggested pad layout provided in the datasheet to maintain thermal and electrical integrity during assembly.

Selection Notes

Select this component when a compact N-channel MOSFET with low Rds(on) is required for space-constrained designs. The 60V rating suits standard logic-level applications. Evaluate the thermal resistance values against the expected ambient temperature and duty cycle to ensure junction temperatures remain within the -55°C to +150°C operating range. Consider the gate charge specifications for driving requirements in switching applications.

Part Context

This part belongs to the DMN6013 series of 60V N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 case style, which is a molded plastic package with matte tin annealed terminals over a copper leadframe. The series is designed for high-density PCB layouts, offering significant board area reduction compared to traditional SO-8 packages while providing comparable or improved thermal performance.

Replacement Considerations

The DMN6013LFG-7 is a parameter-equivalent alternative available in a 2000-unit tape and reel packaging format. Verify that the specific packaging requirement of the target application dictates the choice between the -13 and -7 suffixes, as the electrical characteristics remain identical.

FAQ

What is the maximum continuous drain current at an ambient temperature of +70°C?

At an ambient temperature of +70°C, the maximum continuous drain current is 8.3 A.

Is this component qualified for automotive applications?

Yes, the DMN6013LFG series is qualified to AEC-Q101 standards for high reliability.

DMN6013LFG-13DMN6013LFG-13
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