DMN6013LFGQ-13

$0.28

Description：MOSFET N-CH 60V 10.3A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:58b4c474ff37 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 10.3A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：10.3A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：55.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2577 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMN6013LFGQ-13

Overview

The DMN6013LFGQ-13 is a surface-mount N-channel enhancement mode MOSFET in the PowerDI3333-8 package. It features a drain-source voltage of 60V and a maximum on-resistance of 13mΩ at VGS=10V and ID=10A, or 18mΩ at VGS=4.5V and ID=8A. Continuous drain current reaches 10.3A at TA=+25°C and 45A at TC=+25°C. The device has a total power dissipation of 1W (TA) and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive applications
PowerDI3333-8 package occupies 33% less board area than SO-8
Totally lead-free, fully RoHS compliant, and halogen/antimony free

Applications

Motor control
DC to DC converters
Reverse polarity protection

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets IATF 16949 manufacturing facility requirements if automotive change control protocols are mandated by the design specification.

Selection Notes

Select this component when a compact footprint is required alongside high thermal efficiency. The low on-resistance supports efficient switching in motor control and power conversion circuits. Ensure the application environment aligns with the specified operating temperature range and voltage ratings.

Part Context

This part belongs to the DMN6013LFGQ series from Diodes Incorporated. It utilizes silicon technology and is housed in an 8-PowerVDFN package. The device is designed as a single N-channel enhancement mode field-effect transistor suitable for general-purpose switching tasks.