DMN6013LFGQ-7

$0.99

Description：MOSFET N-CH 60V 10.3A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0deeba908027 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 10.3A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：10.3A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：55.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2577 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMN6013LFGQ-7

Overview

The DMN6013LFGQ-7 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 60 V and a maximum continuous drain current (I_D) of 10.3 A at +25°C ambient temperature, or 45 A at +25°C case temperature. The device exhibits a static drain-source on-resistance (R_DS(ON)) of 13 mΩ at V_GS = 10 V and 18 mΩ at V_GS = 4.5 V. Total gate charge (Q_g) is 55.4 nC at V_GS = 10 V. It operates within a junction temperature range of -55°C to +150°C and utilizes the PowerDI3333-8 package.

Feature Summary

AEC-Q101 qualified for automotive applications with PPAP capability
PowerDI3333-8 package occupies 33% less board area than SO-8
Totally lead-free, fully RoHS compliant, and halogen/antimony free

Applications

Motor control
DC to DC converters
Reverse polarity protection

Procurement Notes

Verify the specific ordering suffix matches project requirements: DMN6013LFGQ-7 indicates a 2,000-unit tape and reel quantity, while DMN6013LFGQ-13 indicates a 3,000-unit tape and reel quantity. Confirm that the component meets all applicable legal, regulatory, and safety standards for the intended deployment environment before finalizing procurement.

Selection Notes

Select this component when designing circuits requiring a compact, thermally efficient N-channel switch rated for 60 V. The low R_DS(ON) minimizes conduction losses in high-density designs. Ensure the gate drive voltage supports the specified R_DS(ON) thresholds. Verify thermal management strategies align with the provided transient thermal resistance data for the target PCB layout.

Part Context

This part belongs to the DMN6013LFGQ series from Diodes Incorporated, designed specifically for automotive environments. It is manufactured in IATF 16949 certified facilities. The device integrates an N-channel MOSFET structure optimized for robust power switching within a small form factor suitable for space-constrained electronic assemblies.