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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.51A SOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：510mA
- Rds On (Max) @ Id, Vgs：2.4Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：0.304nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
- Power - Max：700mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6
- Supplier Device Package：SOT-26
- Grade：-
- Qualification：-
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Overview
The DMN601DMK-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SOT26 surface-mount package with a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 510mA at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 2.4Ω at Vgs=10V and 4.0Ω at Vgs=4V. Total power dissipation is rated at 700mW, with an operating temperature range from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration in a compact SOT26 package
- Low on-resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- ESD protection up to 2kV
Applications
- DC-DC Converters
- Power Management Functions
- Analog Switch
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging format. Confirm compliance with RoHS directives and Halogen-free requirements as specified in the manufacturer's documentation. Ensure the component matches the exact SOT26 case outline dimensions for proper PCB footprint integration.
Selection Notes
Select this component for applications requiring dual N-channel logic-level switching within a small form factor. Evaluate thermal resistance parameters against the intended PCB copper area and ambient conditions. Verify that the gate threshold voltage aligns with the driving circuit logic levels for reliable turn-on performance.
Part Context
This part belongs to the DMN601 series of dual N-channel enhancement mode MOSFETs. It is designed to minimize on-state resistance while maintaining superior switching performance. The device utilizes a molded plastic case material classified as UL 94V-0 flammability rating.
Replacement Considerations
Cross-reference with other dual N-channel MOSFETs in the SOT26 package. Verify pinout compatibility and electrical parameter equivalence before substitution.
FAQ
What is the maximum ESD protection rating for the DMN601DMK-7?
The device provides ESD protection up to 2kV.
Is the DMN601DMK-7 compliant with environmental directives?
Yes, it is totally lead-free, fully RoHS compliant, and halogen- and antimony-free.
