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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.305A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：305mA
- Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
- Power - Max：200mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The DMN601DWK-7 is a dual N-channel enhancement mode MOSFET in an SOT363 package. It features a drain-source voltage of 60V and a continuous drain current of 305mA at 25°C. The maximum static drain-source on-resistance is 3Ω at VGS=5V and 0.05A, or 2Ω at VGS=10V and 0.5A. Total power dissipation is 200mW with a thermal resistance of 625°C/W. Operating temperature ranges from -65°C to +150°C.
Feature Summary
- Dual N-channel configuration for space-efficient circuit designs
- Low gate threshold voltage enabling efficient logic-level driving
- Fast switching speed supported by low input capacitance
- ESD protection rated up to 2kV
Applications
- Motor controls
- Power-management functions
Procurement Notes
Verify the component against Diodes Incorporated datasheet DS30656 Rev. 11-2. Confirm the marking code K7K YM matches the specific batch. Ensure the device meets JEDEC standards for high reliability if required for automotive applications. Check that the packaging corresponds to the standard tape and reel format specified for this part number.
Selection Notes
Select this component for applications requiring a compact dual N-channel solution with moderate voltage ratings. The SOT363 package is suitable for surface-mount assembly where board space is limited. Consider the 3Ω on-resistance at 5V drive when designing logic interfaces. Evaluate the 200mW power dissipation limit under expected operating conditions.
Part Context
This device belongs to the DMN601 series of dual N-channel enhancement mode field effect transistors manufactured by Diodes Incorporated. It utilizes silicon technology housed in a molded plastic SOT363 package. The product is lead-free, fully RoHS compliant, and halogen-free.
Replacement Considerations
An automotive-compliant version is available as DMN601DWKQ. Verify pinout compatibility and electrical parameters before substituting with other dual N-channel MOSFETs in the SOT363 package.
FAQ
What is the maximum pulsed drain current?
The maximum pulsed drain current is 800mA, provided the pulse width is less than or equal to 10µs and the duty cycle is less than or equal to 1%.
Does the device include internal protection?
Yes, the internal schematic indicates the presence of gate protection diodes for each channel.
What is the typical total gate charge?
The typical total gate charge (Qg) is 304pC, measured at VGS=4.5V, VDS=10V, and ID=250mA.
