DMN601DWKQ-7

$0.24

Description：MOSFET 2N-CH 60V 0.305A SOT363
Series：-

SKU:51ff09395ff6 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 0.305A SOT363
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：305mA (Ta)
Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：0.304nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
Power - Max：200mW
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：Automotive
Qualification：AEC-Q101

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DMN601DWKQ-7

Overview

The DMN601DWKQ-7 is a dual N-channel enhancement mode MOSFET in an SOT363 package. It features a drain-source voltage of 60V and a continuous drain current of 305mA at 25°C. The maximum on-resistance is 3Ω at VGS=5V and 2Ω at VGS=10V. Total power dissipation is 200mW, with an operating temperature range from -65°C to +150°C.

Feature Summary

Dual N-channel configuration for compact circuit design
Qualified to AEC-Q101 standards for automotive reliability
ESD protection up to 2kV
Totally lead-free and fully RoHS compliant

Applications

Motor control systems
Power management functions

Procurement Notes

Verify the component against Diodes Incorporated datasheet DS39982 Rev. 2-2. Confirm the part number suffix Q-7 indicates AEC-Q101 qualification and PPAP capability. Ensure the SOT363 package matches the required footprint. Check for compliance with halogen and antimony-free requirements if specified by the project.

Selection Notes

Select this component for applications requiring automotive-grade reliability and small surface-mount packaging. The dual N-channel structure allows for efficient switching in low-voltage circuits. Consider the 3Ω on-resistance at 5V gate drive when designing logic-level interfaces. Verify thermal constraints given the 200mW power dissipation limit in the SOT363 case.

Part Context

This device belongs to the DMN601 series of dual N-channel MOSFETs manufactured by Diodes Incorporated. It is designed specifically for automotive applications meeting stringent quality standards. The SOT363 package provides a compact solution for space-constrained designs while maintaining robust electrical performance.