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Product Detailed Parameters
- Description：MOSFET N-CH 60V 300MA SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Ta)
- Operating Temperature：-65°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMN601K-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 60V and a continuous drain current of 300mA at 25°C. The device offers a maximum static drain-source on-resistance of 2Ω at VGS=10V and 1.4Ω at VGS=5V. Total power dissipation is rated at 350mW with a thermal resistance of 357°C/W. Operating temperature ranges from -65°C to +150°C.
Feature Summary
- Designed for high-efficiency power management applications with minimized on-state resistance.
- Features low gate threshold voltage and low input capacitance for fast switching speed.
- Includes internal gate protection diode and ESD protection up to 2kV.
- Manufactured using lead-free, halogen-free, and antimony-free green molding compound.
Applications
- Motor controls
- Power-management functions
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the standard SOT23 package in a 3000-unit tape and reel carrier. Confirm that the component meets RoHS 2 and RoHS 3 directives if environmental compliance is required for the assembly process. Ensure the design accounts for the specified thermal resistance when calculating junction temperatures under load.
Selection Notes
Select this component for circuits requiring a 60V breakdown voltage and moderate current handling up to 300mA. The SOT23 package is suitable for space-constrained surface-mount designs. Consider the 2Ω on-resistance at 10V drive for logic-level compatibility, noting higher resistance values at lower gate voltages. Evaluate thermal constraints given the 357°C/W junction-to-ambient resistance for continuous operation.
Part Context
This part belongs to the DMN601 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining superior switching performance. The DMN601K variant specifically utilizes the standard SOT23 package, distinguishing it from dual-channel or larger package alternatives within the broader product family.
Replacement Considerations
Cross-reference with other single N-channel MOSFETs offering 60V BVDSS and similar RDS(ON) characteristics in an SOT23-3 package. Verify pinout compatibility (Drain, Gate, Source) and ensure equivalent thermal and electrical ratings match the original design requirements before substitution.
