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Product Detailed Parameters
- Description：2N7002 FAMILY SOT523 T&R 3K
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：356mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：2Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：47 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：400mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
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Overview
The DMN601LT-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a Drain-Source Voltage (V_DSS) of 60 V and a Gate-Source Voltage (V_GSS) rating of ±20 V. The device provides a maximum static Drain-Source On-Resistance (R_DS(ON)) of 2 Ω at V_GS = 10 V and 3 Ω at V_GS = 5 V. Continuous Drain Current (I_D) reaches 356 mA at +25°C and 285 mA at +70°C. Total Power Dissipation (P_D) is rated at 0.4 W on minimum pad layouts and 0.5 W on optimized copper plates. Thermal resistance (R_θJA) is 298 °C/W for standard mounting. Operating and storage temperatures range from -55°C to +150°C.
Feature Summary
- Low on-resistance design minimizes conduction losses while maintaining superior switching performance.
- Integrated ESD protection safeguards the gate terminal against electrostatic discharge events.
- Fast switching speed supported by low input capacitance and optimized gate charge characteristics.
- Lead-free, halogen-free, and antimony-free construction compliant with RoHS directives.
Applications
- Motor control circuits
- High-efficiency power-management applications
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the SOT523 package dimensions align with the target PCB footprint requirements. Ensure the selected component meets the required thermal dissipation standards for the intended operating environment.
Selection Notes
Select this component for applications requiring a compact N-channel MOSFET with a 60 V breakdown voltage. The SOT523 package is suitable for space-constrained designs. Evaluate the R_DS(ON) specifications against the load current requirements to ensure efficient operation within the specified temperature range.
Part Context
This part belongs to the DMN601 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on minimizing on-state resistance while preserving fast switching capabilities. The DMN601LT variant specifically utilizes the SOT523 surface-mount package for high-density board integration.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing requires matching electrical parameters such as V_DSS, I_D, and R_DS(ON), as well as physical package compatibility.
