DMN601LTQ-13

$0.04

Description：2N7002 FAMILY SOT523 T&R 10K
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:31e2205b5d57 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：2N7002 FAMILY SOT523 T&R 10K
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：356mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：2Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：47 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：400mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-523
Package / Case：SOT-523

Download product information

DMN601LTQ-13

Overview

The DMN601LTQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and a maximum continuous drain current of 356mA at 25°C. The device offers a low on-resistance of 2Ω at VGS=10V and 3Ω at VGS=5V. It operates within a junction temperature range of -55°C to +150°C and is housed in an SOT523 package.

Feature Summary

Qualified for automotive applications with AEC-Q101 certification and PPAP capability.
Features low on-resistance, low gate threshold voltage, and fast switching speed.
Includes ESD protected gate and low input/output leakage characteristics.

Applications

Motor controls
Power-management functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets all required automotive quality standards, including IATF 16949 manufacturing facility compliance and full RoHS directives, before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring a compact SOT523 footprint with robust automotive qualification. Ensure the application logic provides sufficient gate drive voltage to achieve the specified low on-resistance thresholds. Evaluate thermal dissipation requirements against the provided transient thermal resistance data for the target operating environment.

Part Context

This part belongs to the DMN601LTQ family of N-channel enhancement mode MOSFETs designed specifically for stringent automotive environments. It is manufactured in IATF 16949 certified facilities and supports specific change control requirements mandated by automotive industry standards.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Do not assume functional equivalence based solely on similar electrical ratings or package types without cross-referencing specific automotive qualification status.

FAQ

Is the DMN601LTQ-13 suitable for high-voltage industrial applications?

No, the datasheet specifies suitability for automotive applications with AEC-Q101 qualification. Industrial use requires separate verification of environmental and reliability standards beyond the documented automotive scope.